P2N2907AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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P2N2907AG Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-600mA
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
P2N2907
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Breakdown Voltage
-60V
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
1.6V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-1.6V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
5V
hFE Min
75
Turn On Time-Max (ton)
50ns
RoHS Status
RoHS Compliant
Lead Free
Lead Free
P2N2907AG Product Details
P2N2907AG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -600mA.In the part, the transition frequency is 200MHz.The maximum collector current is 600mA volts.
P2N2907AG Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of -1.6V the vce saturation(Max) is 1.6V @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is -600mA a transition frequency of 200MHz
P2N2907AG Applications
There are a lot of ON Semiconductor P2N2907AG applications of single BJT transistors.