2SC5865TLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SC5865TLR Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-96
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e1
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
1A
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
250MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
180
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.085675
$1.085675
10
$1.024221
$10.24221
100
$0.966246
$96.6246
500
$0.911554
$455.777
1000
$0.859956
$859.956
2SC5865TLR Product Details
2SC5865TLR Overview
This device has a DC current gain of 180 @ 100mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.The maximum collector current is 1A volts.
2SC5865TLR Features
the DC current gain for this device is 180 @ 100mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 6V the current rating of this device is 1A a transition frequency of 250MHz
2SC5865TLR Applications
There are a lot of ROHM Semiconductor 2SC5865TLR applications of single BJT transistors.