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PN4117A_J61Z

PN4117A_J61Z

PN4117A_J61Z

ON Semiconductor

PN4117A_J61Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

PN4117A_J61Z Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N4117
Power - Max 350mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3pF @ 10V
Current - Drain (Idss) @ Vds (Vgs=0) 30μA @ 10V
Voltage - Cutoff (VGS off) @ Id 600mV @ 1nA
Voltage - Breakdown (V(BR)GSS) 40V
PN4117A_J61Z Product Details

PN4117A_J61Z Description


The 40V InterFET PN4117A_J61Z JFET is targeted ultra-high input impedance applications for mid to high-frequency designs. Gate leakages are typically 1pA at room temperature. The PN4117A_J61Z has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The Operating and Storage Temperature Range is between -55 and 150℃. And the Switch PN4117A_J61Z is in the TO-92 package with 350mW power dissipation.



PN4117A_J61Z Features


InterFET N0001H Geometry

Low Leakage: 0.25 pA Typical

Low Input Capacitance: 2.0 pF Typical

High Input Impedance

RoHS Compliant

SMT, TH, and Bare Die Package options.



PN4117A_J61Z Applications


Low Leakage Input Buffer

High-Frequency Amplifier/Buffer

Ultrahigh Impedance Pre-Amplifier

Voltage Controlled Resistor

Current Limiters and Regulators


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