PN4250A Overview

This device has a DC current gain of 250 @ 100μA 5V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 500μA, 10mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).Single BJT transistor comes in a supplier device package of TO-92-3.The device has a 60V maximal voltage - Collector Emitter Breakdown.In extreme cases, the collector current can be as low as 500mA volts.

PN4250A Features

the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
the supplier device package of TO-92-3

PN4250A Applications

There are a lot of ON Semiconductor PN4250A applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting