PN4393_D26Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
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PN4393_D26Z Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N4393
Power - Max
625mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
14pF @ 20V
Current - Drain (Idss) @ Vds (Vgs=0)
5mA @ 20V
Voltage - Cutoff (VGS off) @ Id
500mV @ 1nA
Voltage - Breakdown (V(BR)GSS)
30V
Resistance - RDS(On)
100Ohms
PN4393_D26Z Product Details
PN4393_D26Z Description
This device is designed for low level analog switch- ing, sample and hold circuits and chopper stabalized amplifiers. Sourced from process 51See J111 for characteristics. A N-Channel JFET is a JFET whose channel is composed of primarily electrons as the charge carrier. This means that when the transistor is turned on, it is primarily the movement of electrons which constitutes the current flow.
PN4393_D26Z FEATURES
Selectable 2- or 3-phase operation at up to 1 MHz per phase
±11 mV worst-case differential sensing error over
temperature
Logic-level PWM outputs for interface to external high
power drivers
Enhanced PWM flex mode for excellent load transient
PN4393_D26Z Applications
2-.3-or 4-Series cell li-ion battery-powered
products(NVDC or Non-NVDC
Wall-powered designs,particularly from 12-V supply