PZTA29 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
PZTA29 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Weight
188mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
800mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PZTA29
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
100V
Transition Frequency
125MHz
Collector Emitter Saturation Voltage
1.2V
Max Breakdown Voltage
100V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
12V
hFE Min
10000
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.508668
$1.508668
10
$1.423272
$14.23272
100
$1.342709
$134.2709
500
$1.266706
$633.353
1000
$1.195006
$1195.006
PZTA29 Product Details
PZTA29 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.As a result, the part has a transition frequency of 125MHz.A breakdown input voltage of 100V volts can be used.When collector current reaches its maximum, it can reach 800mA volts.
PZTA29 Features
the DC current gain for this device is 10000 @ 100mA 5V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 12V the current rating of this device is 800mA a transition frequency of 125MHz
PZTA29 Applications
There are a lot of ON Semiconductor PZTA29 applications of single BJT transistors.