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PZTA29

PZTA29

PZTA29

ON Semiconductor

PZTA29 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PZTA29 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 188mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 800mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PZTA29
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 100V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 100V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 12V
hFE Min 10000
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.508668 $1.508668
10 $1.423272 $14.23272
100 $1.342709 $134.2709
500 $1.266706 $633.353
1000 $1.195006 $1195.006
PZTA29 Product Details

PZTA29 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.As a result, the part has a transition frequency of 125MHz.A breakdown input voltage of 100V volts can be used.When collector current reaches its maximum, it can reach 800mA volts.

PZTA29 Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 800mA
a transition frequency of 125MHz

PZTA29 Applications


There are a lot of ON Semiconductor PZTA29 applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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