MMBT3906VL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
MMBT3906VL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1
Number of Terminations
3
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
250MHz
Frequency - Transition
250MHz
Turn Off Time-Max (toff)
300ns
Turn On Time-Max (ton)
70ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.01760
$0.176
MMBT3906VL Product Details
MMBT3906VL Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.250MHz is present in the transition frequency.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MMBT3906VL Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA a transition frequency of 250MHz
MMBT3906VL Applications
There are a lot of Nexperia USA Inc. MMBT3906VL applications of single BJT transistors.