RFD10P03LSM

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Manufacturer part number:RFD10P03LSM

Manufacturer:ON Semiconductor

Description:RFD10P03LSM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:RFD10P03LSM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	200m Ω @ 10A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1035pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Drain to Source Voltage (Vdss)	30V
RoHS Status	Non-RoHS Compliant

RFD10P03LSM Description

The RFD10P03LSM from ON Semiconductor is a P-Channel power MOSFET built utilizing the MegaFET process. This method, which employs feature sizes similar to those used in LSI circuits, maximizes silicon utilization, resulting in a remarkable performance.