RFD8P05 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFD8P05 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
48W Tc
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
300mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Current - Continuous Drain (Id) @ 25°C
8A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 20V
Drain to Source Voltage (Vdss)
50V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
Non-RoHS Compliant
RFD8P05 Product Details
RFD8P05 Description
These products are P-channel power MOSFET manufactured by MegaFET process. The feature size used in this process is close to that of the LSI circuit, thus achieving the best use of silicon and resulting in excellent performance. They are designed for applications such as switching voltage regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly known as development-oriented TA09832.