RFP3055 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFP3055 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
53W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 20V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RFP3055 Product Details
RFP3055 Description
RFP3055 is a type of N-Channel enhancement-mode silicon gate power field effect transistor provided by ON Semiconductor. It is specifically designed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is well suited for a wide range of applications including switching regulators, switching converters, motor drivers, relay drivers, and more.
RFP3055 Features
Low RDS (on)
UIS rating curve
Available in the TO-251AA package
Operating temperature of 175oC
Temperature compensating PSPICE? model
RFP3055 Applications
Switching regulators
Switching converters
Motor drivers
Relay drivers
Drivers for high power bipolar switching transistors