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SQJ431EP-T1_GE3

SQJ431EP-T1_GE3

SQJ431EP-T1_GE3

Vishay Siliconix

MOSFET P-CHAN 200V SO8L

SOT-23

SQJ431EP-T1_GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Supplier Device Package PowerPAK® SO-8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 83W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 213mOhm @ 1A, 4V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4355pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Drain to Source Resistance 178mOhm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.211968 $13.211968
10 $12.464121 $124.64121
100 $11.758605 $1175.8605
500 $11.093023 $5546.5115
1000 $10.465116 $10465.116

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