SBAT54SLT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
SOT-23
SBAT54SLT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2005
Series
Automotive
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.70
Terminal Form
GULL WING
Base Part Number
BAT54SL
Pin Count
3
Reference Standard
AEC-Q101
Number of Elements
2
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
2μA @ 25V
Power Dissipation
225mW
Voltage - Forward (Vf) (Max) @ If
800mV @ 100mA
Forward Current
200mA
Max Reverse Leakage Current
2μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
600mA
Output Current-Max
0.2A
Application
FAST RECOVERY
Halogen Free
Halogen Free
Current - Average Rectified (Io)
200mA DC
Forward Voltage
800mV
Max Reverse Voltage (DC)
30V
Average Rectified Current
200mA
Number of Phases
1
Reverse Recovery Time
5 ns
Peak Reverse Current
2μA
Max Repetitive Reverse Voltage (Vrrm)
30V
Peak Non-Repetitive Surge Current
600mA
Diode Configuration
1 Pair Series Connection
Recovery Time
5 ns
Reverse Test Voltage
25V
Height
1.01mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
SBAT54SLT1G Product Details
SBAT54SLT1G Overview
The device operates when the forward voltage is set to 800mV.0.2A is its maximum output voltage.Array is important to monArrayor the surge current and make sure that Array does not exceed 600mA.In this case, the forward voltage has to be set at 200mA to operate the device.A reverse voltage peak of 2μA is used to power devices like this one.The maximum reverse leakage current from a semiconductor device when reverse biased is 2μA.In addition to its primary function, this device creates "225mW" of heat (energy loss).
SBAT54SLT1G Features
800mV forward voltage a maximum output voltage of 0.2A a peak voltage of 2μA a reverse voltage peak of 2μA
SBAT54SLT1G Applications
There are a lot of ON Semiconductor SBAT54SLT1G applications of rectifier diode array.