SBC846BLT1G Overview

In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 65V volts.A maximum collector current of 100mA volts is possible.

SBC846BLT1G Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

SBC846BLT1G Applications

There are a lot of ON Semiconductor SBC846BLT1G applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver