MMST4403T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
MMST4403T146 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
59
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-600mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
T4403
Pin Count
3
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Element Configuration
Single
Power - Max
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
750mV
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
200MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-6V
hFE Min
20
VCEsat-Max
0.6 V
Turn Off Time-Max (toff)
255ns
Turn On Time-Max (ton)
35ns
Collector-Base Capacitance-Max
7pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.686795
$0.686795
10
$0.647920
$6.4792
100
$0.611245
$61.1245
500
$0.576646
$288.323
1000
$0.544006
$544.006
MMST4403T146 Product Details
MMST4403T146 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 1V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.The base voltage of the emitter can be kept at -6V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.A maximum collector current of 600mA volts can be achieved.
MMST4403T146 Features
the DC current gain for this device is 100 @ 150mA 1V the vce saturation(Max) is 750mV @ 50mA, 500mA the emitter base voltage is kept at -6V the current rating of this device is -600mA a transition frequency of 200MHz
MMST4403T146 Applications
There are a lot of ROHM Semiconductor MMST4403T146 applications of single BJT transistors.