ZXTN19060CGTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZXTN19060CGTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
250.212891mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
5.3W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
130MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN19060C
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
5.3W
Case Connection
COLLECTOR
Power - Max
3W
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
7A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 700mA, 7A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
50mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
7A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.597254
$2.597254
10
$2.450240
$24.5024
100
$2.311547
$231.1547
500
$2.180705
$1090.3525
1000
$2.057269
$2057.269
ZXTN19060CGTA Product Details
ZXTN19060CGTA Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 50mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of 7A is necessary for high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.In this part, there is a transition frequency of 130MHz.Input voltage breakdown is available at 60V volts.In extreme cases, the collector current can be as low as 7A volts.
ZXTN19060CGTA Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of 50mV the vce saturation(Max) is 300mV @ 700mA, 7A the emitter base voltage is kept at 7V a transition frequency of 130MHz
ZXTN19060CGTA Applications
There are a lot of Diodes Incorporated ZXTN19060CGTA applications of single BJT transistors.