SGH10N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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SGH10N60RUFDTU Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
75W
Current Rating
10A
Base Part Number
SG*10N60
Number of Elements
1
Element Configuration
Single
Power Dissipation
75W
Input Type
Standard
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
16A
Reverse Recovery Time
60ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.2V
Turn On Time
49 ns
Test Condition
300V, 10A, 20 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 10A
Turn Off Time-Nom (toff)
284 ns
Gate Charge
30nC
Current - Collector Pulsed (Icm)
30A
Td (on/off) @ 25°C
15ns/36ns
Switching Energy
141μJ (on), 215μJ (off)
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.728054
$1.728054
10
$1.630240
$16.3024
100
$1.537962
$153.7962
500
$1.450908
$725.454
1000
$1.368781
$1368.781
SGH10N60RUFDTU Product Details
SGH10N60RUFDTU Description
SGH10N60RUFDTU is a 600v short circuit rated IGBT. Fairchild's RUFD series of insulated gate bipolar transistors (IGBTs) provide low conduction and switching losses as well as short-circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS), and general inverters where short circuit ruggedness is a required feature. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SGH10N60RUFDTU is in the TO-3P-3 package with 75W power dissipation.
SGH10N60RUFDTU Features
Short Circuit rated 10us @ T C = 100°C, V GE = 15V
High-Speed Switching
Low Saturation Voltage : V CE(sat) = 2.2 V @ I C = 10A