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APT75GN60LDQ3G

APT75GN60LDQ3G

APT75GN60LDQ3G

Microsemi Corporation

Trans IGBT Chip N-CH 600V 155A 3-Pin(3+Tab) TO-264

SOT-23

APT75GN60LDQ3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Weight 10.6g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 536W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 47 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 385 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 155A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.45V
Turn On Time 95 ns
Test Condition 400V, 75A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 75A
Continuous Collector Current 155A
Turn Off Time-Nom (toff) 485 ns
IGBT Type Trench Field Stop
Gate Charge 485nC
Current - Collector Pulsed (Icm) 225A
Td (on/off) @ 25°C 47ns/385ns
Switching Energy 2500μJ (on), 2140μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Height 5.21mm
Length 26.49mm
Width 20.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $12.56000 $12.56
10 $11.30200 $113.02
25 $10.29720 $257.43
100 $9.29250 $929.25
250 $8.53908 $2134.77
500 $7.78564 $3892.82
1,000 $6.78104 $6.78104

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