APT75GN60LDQ3G

new-10%

Manufacturer part number:APT75GN60LDQ3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 155A 3-Pin(3+Tab) TO-264

Case Package:SOT-23

Datasheet:APT75GN60LDQ3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Weight	10.6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	536W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	47 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	385 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	155A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.45V
Turn On Time	95 ns
Test Condition	400V, 75A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 75A
Continuous Collector Current	155A
Turn Off Time-Nom (toff)	485 ns
IGBT Type	Trench Field Stop
Gate Charge	485nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	47ns/385ns
Switching Energy	2500μJ (on), 2140μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
Height	5.21mm
Length	26.49mm
Width	20.5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free