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SGH80N60UFTU

SGH80N60UFTU

SGH80N60UFTU

ON Semiconductor

SGH80N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGH80N60UFTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 195W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 80A
Test Condition 300V, 40A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 40A
Gate Charge 175nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 23ns/90ns
Switching Energy 570μJ (on), 590μJ (off)
SGH80N60UFTU Product Details

SGH80N60UFTU Description


On Semiconductor SGH80N60UFTU Insulated Gate Bipolar Transistors (IGBTs) have minimal conduction and switching losses. The UF series is intended for applications requiring high-speed switchings, such as motor control and general inverters.



SGH80N60UFTU Features


  • High-speed switching

  • High input impedance

  • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A



SGH80N60UFTU Applications


  • Robotics

  • Servo controls

  • AC & DC motor controls

  • General-purpose inverters


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