SGH80N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
SGH80N60UFTU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
195W
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
80A
Test Condition
300V, 40A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 40A
Gate Charge
175nC
Current - Collector Pulsed (Icm)
220A
Td (on/off) @ 25°C
23ns/90ns
Switching Energy
570μJ (on), 590μJ (off)
SGH80N60UFTU Product Details
SGH80N60UFTU Description
On Semiconductor SGH80N60UFTU Insulated Gate Bipolar Transistors (IGBTs) have minimal conduction and switching losses. The UF series is intended for applications requiring high-speed switchings, such as motor control and general inverters.
SGH80N60UFTU Features
High-speed switching
High input impedance
Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A