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SGU15N40LTU

SGU15N40LTU

SGU15N40LTU

ON Semiconductor

SGU15N40LTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

SGU15N40LTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 400V
Max Power Dissipation 45W
Current Rating 130A
Element Configuration Single
Power Dissipation 45W
Input Type Standard
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 130V
Vce(on) (Max) @ Vge, Ic 8V @ 4.5V, 130A
IGBT Type Trench
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.106451 $1.106451
10 $1.043822 $10.43822
100 $0.984738 $98.4738
500 $0.928998 $464.499
1000 $0.876413 $876.413
SGU15N40LTU Product Details

SGU15N40LTU Descriptions


The ON SEMI SGU15N40LTU is an Insulated Gate Bipolar Transistor with a trench gate structure that provides superior conduction  and switching

performance in comparison with transistors having a planar gate structure. 



SGU15N40LTU Features


  • High input impedance

  • High peak current capability (130A)

  • Easy gate drive



SGU15N40LTU Applications


  • Strobe flash


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