STGW30M65DF2                  Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

STGW30M65DF2                   Features

· 6 μs of minimum short-circuit withstand time

· VCE(sat) = 1.55 V (typ.) @ IC = 30 A

· Tight parameters distribution

· Safer paralleling

· Low thermal resistance

· Soft and very fast recovery antiparallel diode

STGW30M65DF2                    Applications

· Motor control

· UPS

· PFC