SI4532DY       Description

These double N-channel and P-channel enhanced mode power field effect transistors are produced using on Semiconductor's PRPROPRORT, high cell density, and DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.

SI4532DY         Features

 N-Channel 3.9A, 30V.RDS(ON) = 0.065? @VGS = 10V

RDS(ON) = 0.095? @VGS = 4.5V.

P-Channel -3.5A,-30V.RDS(ON)= 0.085? @VGS = -10V

RDS(ON)= 0.190 ? @VGS = -4.5V.

 High density cell design for extremely low RDS(ON).

 High power and current handling capability in a widely

    used surface mount package.

Dual (N & P-Channel) MOSFET in surface mount

    package.

SI4532DY             Applications

laptop power management

other battery-powered circuits