PMCXB1000UEZ

new-10%

Manufacturer part number:PMCXB1000UEZ

Manufacturer:Nexperia USA Inc.

Description:MOSFET N/P-CH 30V DFN1010B-6

Case Package:SOT-23

Datasheet:PMCXB1000UEZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	6-XFDFN Exposed Pad
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
Reference Standard	IEC-60134
JESD-30 Code	R-PDSO-N6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	285mW Ta
FET Type	N and P-Channel Complementary
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	670m Ω @ 590mA, 4.5V, 1.4 Ω @ 410mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	30.3pF @ 15V 43.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C	590mA Ta 410mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.05nC @ 4.5V, 1.2nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	0.59A
Drain-source On Resistance-Max	0.9Ohm
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant