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SMMBTA14LT3G

SMMBTA14LT3G

SMMBTA14LT3G

ON Semiconductor

SMMBTA14LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SMMBTA14LT3G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation225mW
Pin Count3
Polarity NPN
Configuration Single
Power - Max 225mW
Halogen Free Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 125MHz
Frequency - Transition 125MHz
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:93168 items

Pricing & Ordering

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SMMBTA14LT3G Product Details

SMMBTA14LT3G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.In the part, the transition frequency is 125MHz.During maximum operation, collector current can be as low as 300mA volts.

SMMBTA14LT3G Features


the DC current gain for this device is 20000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz

SMMBTA14LT3G Applications


There are a lot of ON Semiconductor SMMBTA14LT3G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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