BCP68,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCP68,115 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCP68
Pin Count
4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
650mW
Case Connection
COLLECTOR
Power - Max
1.4W
Transistor Application
SWITCHING
Gain Bandwidth Product
170MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector (Ic) (Max)
1A
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
hFE Min
85
Max Junction Temperature (Tj)
150°C
Ambient Temperature Range High
150°C
Height
1.8mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.170425
$0.170425
10
$0.160779
$1.60779
100
$0.151678
$15.1678
500
$0.143092
$71.546
1000
$0.134992
$134.992
BCP68,115 Product Details
BCP68,115 Overview
DC current gain in this device equals 85 @ 500mA 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Maximum collector currents can be below 2A volts.
BCP68,115 Features
the DC current gain for this device is 85 @ 500mA 1V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 40MHz
BCP68,115 Applications
There are a lot of Nexperia USA Inc. BCP68,115 applications of single BJT transistors.