SMMBTA92LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SMMBTA92LT3G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
MMBTA92
Pin Count
3
Reference Standard
AEC-Q101
Number of Elements
1
Element Configuration
Single
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 30mA 10V
Current - Collector Cutoff (Max)
250nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Max Frequency
100MHz
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-500mV
Frequency - Transition
50MHz
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
-5V
Height
1.11mm
Length
3.04mm
Width
2.64mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.381000
$0.381
10
$0.359434
$3.59434
100
$0.339089
$33.9089
500
$0.319895
$159.9475
1000
$0.301788
$301.788
SMMBTA92LT3G Product Details
SMMBTA92LT3G Overview
This device has a DC current gain of 25 @ 30mA 10V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a transition frequency of 50MHz in the part.A maximum collector current of 500mA volts is possible.
SMMBTA92LT3G Features
the DC current gain for this device is 25 @ 30mA 10V a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 2mA, 20mA the emitter base voltage is kept at -5V a transition frequency of 50MHz
SMMBTA92LT3G Applications
There are a lot of ON Semiconductor SMMBTA92LT3G applications of single BJT transistors.