SNSS40600CF8T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
SNSS40600CF8T1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Number of Pins
8
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Pin Count
8
Halogen Free
Halogen Free
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
220mV
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 1A 2V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
220mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
40V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
40V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.464924
$0.464924
10
$0.438607
$4.38607
100
$0.413780
$41.378
500
$0.390359
$195.1795
1000
$0.368263
$368.263
SNSS40600CF8T1G Product Details
SNSS40600CF8T1G Overview
This device has a DC current gain of 220 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 220mV @ 400mA, 4A.Collector current can be as low as 6A volts at its maximum.
SNSS40600CF8T1G Features
the DC current gain for this device is 220 @ 1A 2V the vce saturation(Max) is 220mV @ 400mA, 4A
SNSS40600CF8T1G Applications
There are a lot of ON Semiconductor SNSS40600CF8T1G applications of single BJT transistors.