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SNSS40600CF8T1G

SNSS40600CF8T1G

SNSS40600CF8T1G

ON Semiconductor

SNSS40600CF8T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SNSS40600CF8T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 830mW
Pin Count 8
Halogen Free Halogen Free
Transistor Type PNP
Collector Emitter Voltage (VCEO) 220mV
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 1A 2V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 220mV @ 400mA, 4A
Collector Emitter Breakdown Voltage 40V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.464924 $0.464924
10 $0.438607 $4.38607
100 $0.413780 $41.378
500 $0.390359 $195.1795
1000 $0.368263 $368.263
SNSS40600CF8T1G Product Details

SNSS40600CF8T1G Overview


This device has a DC current gain of 220 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 220mV @ 400mA, 4A.Collector current can be as low as 6A volts at its maximum.

SNSS40600CF8T1G Features


the DC current gain for this device is 220 @ 1A 2V
the vce saturation(Max) is 220mV @ 400mA, 4A

SNSS40600CF8T1G Applications


There are a lot of ON Semiconductor SNSS40600CF8T1G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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