SPZT2222AT1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is essential to maintain the continuous collector voltage at 600mA to achieve high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In the part, the transition frequency is 300MHz.A maximum collector current of 600mA volts is possible.

SPZT2222AT1G Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

SPZT2222AT1G Applications

There are a lot of ON Semiconductor SPZT2222AT1G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting