SS9012GTA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 112 @ 50mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -180mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.This device can take an input voltage of 20V volts before it breaks down.Maximum collector currents can be below 500mA volts.

SS9012GTA Features

the DC current gain for this device is 112 @ 50mA 1V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 600mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA

SS9012GTA Applications

There are a lot of ON Semiconductor SS9012GTA applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver