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SSVPZT751T1G

SSVPZT751T1G

SSVPZT751T1G

ON Semiconductor

SSVPZT751T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SSVPZT751T1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Package / Case SOT-223-4
Number of Pins 4
PackagingTape & Reel (TR)
Published 2007
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Max Power Dissipation800mW
Polarity PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2A
Collector Base Voltage (VCBO) 80V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3705 items

Pricing & Ordering

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SSVPZT751T1G Product Details

SSVPZT751T1G Overview


Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

SSVPZT751T1G Features



SSVPZT751T1G Applications


There are a lot of ON Semiconductor SSVPZT751T1G applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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