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SSVPZT751T1G

  • SSVPZT751T1G
  • SSVPZT751T1G

SSVPZT751T1G

SSVPZT751T1G

ON Semiconductor

SSVPZT751T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

SSVPZT751T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Package / Case SOT-223-4
Number of Pins 4
Packaging Tape & Reel (TR)
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 800mW
Polarity PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 2A
Collector Base Voltage (VCBO) 80V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
SSVPZT751T1G Product Details

SSVPZT751T1G Overview


Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

SSVPZT751T1G Features



SSVPZT751T1G Applications


There are a lot of ON Semiconductor SSVPZT751T1G applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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