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TIP3055G

TIP3055G

TIP3055G

ON Semiconductor

TIP3055G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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TIP3055G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 90W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 2.5MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 2.5MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 3V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2.5MHz
Collector Emitter Saturation Voltage 1.1V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Height 20.3454mm
Length 15.2146mm
Width 4.9022mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.83000 $1.83
30 $1.56000 $46.8
120 $1.33683 $160.4196
510 $1.10753 $564.8403
1,020 $0.92655 $0.92655
TIP3055G Product Details

TIP3055G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 4A 4V.With a collector emitter saturation voltage of 1.1V, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3.3A, 10A.An emitter's base voltage can be kept at 7V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 2.5MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

TIP3055G Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 2.5MHz

TIP3055G Applications


There are a lot of ON Semiconductor TIP3055G applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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