Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NSV20200LT1G

  • NSV20200LT1G
  • NSV20200LT1G

NSV20200LT1G

NSV20200LT1G

ON Semiconductor

NSV20200LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSV20200LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 460mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number NSS20200
Pin Count 3
Reference Standard AEC-Q101
Number of Elements 1
Configuration SINGLE
Power - Max 460mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 180mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 20V
Turn On Time-Max (ton) 180ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.296253 $1.296253
10 $1.222880 $12.2288
100 $1.153660 $115.366
500 $1.088359 $544.1795
1000 $1.026754 $1026.754
NSV20200LT1G Product Details

NSV20200LT1G Overview


In this device, the DC current gain is 250 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).100MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

NSV20200LT1G Features


the DC current gain for this device is 250 @ 500mA 2V
the vce saturation(Max) is 180mV @ 200mA, 2A
a transition frequency of 100MHz

NSV20200LT1G Applications


There are a lot of ON Semiconductor NSV20200LT1G applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

Related Part Number

MPSA92RLRMG
ON Semiconductor
MPSA92RLRMG
$0 $/piece
2N4898
Microsemi Corporation
2N4898
$0 $/piece
JAN2N4238
Microsemi Corporation
JAN2N4238
$0 $/piece
HS2907A
Microsemi Corporation
HS2907A
$0 $/piece
2N930UB
Microsemi Corporation
2N930UB
$0 $/piece
JAN2N918UB
Microsemi Corporation
JAN2N918UB
$0 $/piece
2N1486
Microsemi Corporation
2N1486
$0 $/piece
2N5152
Microsemi Corporation
2N5152
$0 $/piece
JANTXV2N5005
Microsemi Corporation
JANTXV2N5005
$0 $/piece
2SC4487S-AN
ON Semiconductor
2SC4487S-AN
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News