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TIP31AG

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TIP31AG

TIP31AG

ON Semiconductor

TIP31AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP31AG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 45.359237kg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP31
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 1.2V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 15.748mm
Length 10.28mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.62000 $0.62
50 $0.49900 $24.95
100 $0.40150 $40.15
500 $0.31800 $159
TIP31AG Product Details
TIP31AG Description

The TIP31AG is a medium-power NPN bipolar junction transistor that is commonly used. TIP31AG transistor is a three-terminal bipolar junction transistor (BJT) that can be used for amplification or switching. TIP31AG is made up of three parts of semiconductors, each with a different doping pattern. The base is thin, and the emitter and collector are extensively doped on the exterior.

TIP31AG Features

High current gain - bandwidth
60VDC Minimum collector-emitter sustaining voltage (VCEO (sus))
1.2VDC Maximum collector-emitter saturation voltage (VCE (sat))
60VDC Collector to base voltage (VCBO)
5VDC Emitter to base voltage (VEBO)
5ADC Peak collector current
1ADC Base current (IB)
3.125°C/W Thermal resistance, junction to case
62.5°C/W Thermal resistance, junction to ambient

TIP31AG Applications

Industrial
Speed control of Motors
Half-bridge circuits
high current switching (up to 2A) loads
Can be used as medium Power switches
Large signal amplification
Inverter and other rectifier circuits

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