ZTX749A_J05Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
ZTX749A_J05Z Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
48 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Base Part Number
ZTX749A
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
1W
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
35V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
35V
Voltage - Collector Emitter Breakdown (Max)
35V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
70
RoHS Status
RoHS Compliant
ZTX749A_J05Z Product Details
ZTX749A_J05Z Overview
DC current gain in this device equals 100 @ 1A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.TO-92-3 is the supplier device package for this product.Detection of Collector Emitter Breakdown at 35V maximal voltage is present.Maximum collector currents can be below 2A volts.
ZTX749A_J05Z Features
the DC current gain for this device is 100 @ 1A 2V the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 5V the supplier device package of TO-92-3
ZTX749A_J05Z Applications
There are a lot of ON Semiconductor ZTX749A_J05Z applications of single BJT transistors.