2N6038 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N6038 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max
40W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
4A
RoHS Status
Non-RoHS Compliant
2N6038 Product Details
2N6038 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 2A 3V DC current gain.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).This device displays a 60V maximum voltage - Collector Emitter Breakdown.
2N6038 Features
the DC current gain for this device is 750 @ 2A 3V the vce saturation(Max) is 3V @ 40mA, 4A
2N6038 Applications
There are a lot of Rochester Electronics, LLC 2N6038 applications of single BJT transistors.