BCX 56-10 E6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BCX 56-10 E6327 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCX56
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Frequency - Transition
100MHz
Power Dissipation-Max (Abs)
1W
RoHS Status
RoHS Compliant
BCX 56-10 E6327 Product Details
BCX 56-10 E6327 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Parts of this part have transition frequencies of 100MHz.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
BCX 56-10 E6327 Features
the DC current gain for this device is 63 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA a transition frequency of 100MHz
BCX 56-10 E6327 Applications
There are a lot of Infineon Technologies BCX 56-10 E6327 applications of single BJT transistors.