DSA7101Q0L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
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DSA7101Q0L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
DSA7101
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 150mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
80V
Max Frequency
120MHz
Transition Frequency
120MHz
Collector Emitter Saturation Voltage
-400mV
Max Breakdown Voltage
80V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
hFE Min
90
Height
1.5mm
Length
4.5mm
Width
2.5mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
DSA7101Q0L Product Details
DSA7101Q0L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 90 @ 150mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.When VCE saturation is 400mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -5V to achieve high efficiency.In the part, the transition frequency is 120MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
DSA7101Q0L Features
the DC current gain for this device is 90 @ 150mA 10V a collector emitter saturation voltage of -400mV the vce saturation(Max) is 400mV @ 30mA, 300mA the emitter base voltage is kept at -5V a transition frequency of 120MHz
DSA7101Q0L Applications
There are a lot of Panasonic Electronic Components DSA7101Q0L applications of single BJT transistors.