DSA7101Q0L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 90 @ 150mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.When VCE saturation is 400mV @ 30mA, 300mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -5V to achieve high efficiency.In the part, the transition frequency is 120MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
DSA7101Q0L Features
the DC current gain for this device is 90 @ 150mA 10V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
a transition frequency of 120MHz
DSA7101Q0L Applications
There are a lot of Panasonic Electronic Components DSA7101Q0L applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
