MPS2907AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS2907AG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
HTS Code
8541.21.00.75
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
Turn Off Time-Max (toff)
100ns
Turn On Time-Max (ton)
45ns
RoHS Status
ROHS3 Compliant
MPS2907AG Product Details
MPS2907AG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.The device exhibits a collector-emitter breakdown at 60V.
MPS2907AG Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA a transition frequency of 200MHz
MPS2907AG Applications
There are a lot of Rochester Electronics, LLC MPS2907AG applications of single BJT transistors.