IRF830AL

new-10%

Manufacturer part number:IRF830AL

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 5A TO262-3

Case Package:SOT-23

Datasheet:IRF830AL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package	I2PAK
Weight	2.387001g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	3.1W Ta 74W Tc
Element Configuration	Single
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	21ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Input Capacitance	620pF
Drain to Source Resistance	1.4Ohm
Rds On Max	1.4 Ω
Height	9.65mm
Length	10.41mm
Width	4.7mm
RoHS Status	Non-RoHS Compliant