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2SK4150TZ-E

2SK4150TZ-E

2SK4150TZ-E

Renesas Electronics America

MOSFET N-CH 250V 0.4A TO-92

SOT-23

2SK4150TZ-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 750mW Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7 Ω @ 200mA, 4V
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 25V
Current - Continuous Drain (Id) @ 25°C 400mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Vgs (Max) ±10V
Continuous Drain Current (ID) 400mA
Drain Current-Max (Abs) (ID) 0.4A
Drain-source On Resistance-Max 5.9Ohm
DS Breakdown Voltage-Min 250V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.870306 $0.870306
10 $0.821043 $8.21043
100 $0.774569 $77.4569
500 $0.730726 $365.363
1000 $0.689364 $689.364

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