H7N1002LSTL-E

new-10%

Manufacturer part number:H7N1002LSTL-E

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 100V LDPAK

Case Package:SOT-23

Datasheet:H7N1002LSTL-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-83
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e6
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN BISMUTH
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	100W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 37.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds	9700pF @ 10V
Current - Continuous Drain (Id) @ 25°C	75A Ta
Gate Charge (Qg) (Max) @ Vgs	155nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	75A
Drain-source On Resistance-Max	0.015Ohm
Pulsed Drain Current-Max (IDM)	300A
DS Breakdown Voltage-Min	100V
RoHS Status	ROHS3 Compliant