IXFQ10N80P

new-10%

Manufacturer part number:IXFQ10N80P

Manufacturer:IXYS

Description:MOSFET N-CH 800V 10A TO-3P

Case Package:SOT-23

Datasheet:IXFQ10N80P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	HiPerFET™, PolarHT™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	2050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Avalanche Energy Rating (Eas)	600 mJ
RoHS Status	ROHS3 Compliant