HAT2169H-EL-E

new-10%

Manufacturer part number:HAT2169H-EL-E

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 40V 50A LFPAK

Case Package:SOT-23

Datasheet:HAT2169H-EL-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	20
Pin Count	5
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	30W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6650pF @ 10V
Current - Continuous Drain (Id) @ 25°C	50A Ta
Gate Charge (Qg) (Max) @ Vgs	45nC @ 4.5V
Rise Time	64ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9.5 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.006Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	200A
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free