STD80N6F6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD80N6F6 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
5mOhm
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Base Part Number
STD80
Number of Channels
1
Power Dissipation-Max
120W Tc
Element Configuration
Single
Power Dissipation
120W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7480pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
122nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
80A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Height
4.6mm
Length
10.4mm
Width
9.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
STD80N6F6 Product Details
STD80N6F6 Description
STD80N6F6 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 60V. The operating temperature of the STD80N6F6 is -55°C~175°C TJ and its maximum power dissipation is 120W. This device is an N-channel Power MOSFET developed using the STripFET? F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.