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HAT2256RWS-E

  • HAT2256RWS-E
  • HAT2256RWS-E

HAT2256RWS-E

HAT2256RWS-E

Renesas Electronics America

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 30m Ω @ 4A, 10V ±20V 1210pF @ 10V 10nC @ 4.5V 60V 8-SOIC (0.154, 3.90mm Width)

SOT-23

HAT2256RWS-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
HAT2256RWS-E Product Details

HAT2256RWS-E Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1210pF @ 10V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

HAT2256RWS-E Features


a 60V drain to source voltage (Vdss)


HAT2256RWS-E Applications


There are a lot of Renesas Electronics America
HAT2256RWS-E applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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