HAT2287WP-EL-E

new-10%

Manufacturer part number:HAT2287WP-EL-E

Manufacturer:Renesas Electronics America

Description:Trans MOSFET N-CH Si 200V 17A Automotive

Case Package:SOT-23

Datasheet:HAT2287WP-EL-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	20
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	30W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	94m Ω @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Ta
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	17A
Drain-source On Resistance-Max	0.094Ohm
Pulsed Drain Current-Max (IDM)	34A
DS Breakdown Voltage-Min	200V
RoHS Status	ROHS3 Compliant