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NP110N04PUG-E1-AY

NP110N04PUG-E1-AY

NP110N04PUG-E1-AY

Renesas Electronics America

MOSFET N-CH 40V MP-25ZP/TO-263

SOT-23

NP110N04PUG-E1-AY Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Configuration Single
Power Dissipation-Max 1.8W Ta 288W Tc
Turn On Delay Time 54 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.8m Ω @ 55A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 25700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V
Rise Time 140ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant

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