STD3NK60ZD

new-10%

Manufacturer part number:STD3NK60ZD

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 600V 2.4A DPAK

Case Package:SOT-23

Datasheet:STD3NK60ZD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperFREDmesh™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD3N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	45W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.6 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	311pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.4A Tc
Gate Charge (Qg) (Max) @ Vgs	11.8nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	2.4A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	9.6A
Avalanche Energy Rating (Eas)	150 mJ
RoHS Status	ROHS3 Compliant