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DMTH8012LPSQ-13

DMTH8012LPSQ-13

DMTH8012LPSQ-13

Diodes Incorporated

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 17m Ω @ 12A, 10V ±20V 2051pF @ 40V 46.8nC @ 10V 80V 8-PowerTDFN

SOT-23

DMTH8012LPSQ-13 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.6W Ta 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2051pF @ 40V
Current - Continuous Drain (Id) @ 25°C 10A Ta 72A Tc
Gate Charge (Qg) (Max) @ Vgs 46.8nC @ 10V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 72A
Drain Current-Max (Abs) (ID) 10A
Drain-source On Resistance-Max 0.017Ohm
Avalanche Energy Rating (Eas) 10.2 mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
DMTH8012LPSQ-13 Product Details

DMTH8012LPSQ-13 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 10.2 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2051pF @ 40V.This device conducts a continuous drain current (ID) of 72A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 10A.This transistor requires a drain-source voltage (Vdss) of 80V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

DMTH8012LPSQ-13 Features


the avalanche energy rating (Eas) is 10.2 mJ
a continuous drain current (ID) of 72A
a 80V drain to source voltage (Vdss)


DMTH8012LPSQ-13 Applications


There are a lot of Diodes Incorporated
DMTH8012LPSQ-13 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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