NP180N055TUJ-E1-AY

new-10%

Manufacturer part number:NP180N055TUJ-E1-AY

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 55V 180A TO-263-7

Case Package:SOT-23

Datasheet:NP180N055TUJ-E1-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	7
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta 348W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.3m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	14250pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	230nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	180A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0023Ohm
DS Breakdown Voltage-Min	55V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant