NP32N055SLE-E1-AY

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NP32N055SLE-E1-AY

Manufacturer part number:NP32N055SLE-E1-AY

Manufacturer:Renesas Electronics America

Description:NP32N055SLE-E1-AY datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Renesas Electronics America stock available on our website

Case Package:SOT-23

Datasheet:NP32N055SLE-E1-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Configuration	Single
Power Dissipation-Max	1.2W Ta 66W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.2W
Turn On Delay Time	14 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	24m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 5V
Rise Time	8ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.4 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant